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SIHG33N65EF Datasheet Power MOSFET

Manufacturer: Vishay

Overview: .vishay. SiHG33N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 171 25 45 Single TO-247AC 0.

Key Features

  • Fast body diode MOSFET using E series technology.
  • Reduced trr, Qrr, and IRRM.
  • Low figure-of-merit (FOM): Ron x Qg.
  • Low input capacitance (Ciss).
  • Low switching losses due to reduced Qrr.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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