SiHG32N50D Description
SiHG32N50D Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 96 18 29 Single 0.150 TO-247AC D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and Halogen-free.
SiHG32N50D Key Features
- Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
- Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-Of-Merit (FOM): Ron x Qg