SIR5802DP
SIR5802DP is N-Channel 80V MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Gen V power MOSFET
- Ultra-low RDS x Qg FOM product
- Optimized Qgd/Qgs ratio
- Excellent efficiency performance in power supplies
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Synchronous rectification
- Primary side switch
- OR-ing and hot swap switch
- Motor drive control
- Battery management
N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free Alternate manufacturing location
Power PAK SO-8 SIR5802DP-T1-RE3 SIR5802DP-T1-BE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous source-drain diode current
Single pulse avalanche current Single pulse avalanche energy
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering remendations (peak temperature) c
VDS VGS
IDM IS IAS EAS
TJ,...
