SIR770DP Description
SiR770DP Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS RDS(on) () Channel-1 30 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V Channel-2 30 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a, f 8.0 8.0 8.0 8.0 Qg (Typ.).
SIR770DP Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2002/95/EC