SIR798DP Description
New Product SiR798DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) 0.00205 at VGS = 10 V 0.00300 at VGS = 4.5 V ID (A)a 60 60 PowerPAK® SO-8 Qg (Typ.) 41.6 nC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm.
SIR798DP Key Features
- Halogen-free According to IEC 61249-2-21
- SkyFET® Monolithic TrenchFET®
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2002/95/EC