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SIR850DP - N-Channel MOSFET

Features

  • Halogen-free.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.

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Datasheet Details

Part number SIR850DP
Manufacturer Vishay
File Size 305.14 KB
Description N-Channel MOSFET
Datasheet download datasheet SIR850DP Datasheet

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Full PDF Text Transcription

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N-Channel 25-V (D-S) MOSFET SiR850DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.007 at VGS = 10 V 25 0.009 at VGS = 4.5 V PowerPAK SO-8 ID (A)a 30a 30a Qg (Typ.) 8.4 nC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: SiR850DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Synchronous Buck - High-Side D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.
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