SIR882DP Description
New Product N-Channel 100 V (D-S) MOSFET SiR882DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.0087 at VGS = 10 V 100 0.0094 at VGS = 7.5 V 0.0115 at VGS = 4.5 V PowerPAK® SO-8 ID (A)a 60 60 60 Qg (Typ.) 18.3 nC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm.
SIR882DP Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
- pliant to RoHS Directive 2002/95/EC