SIS406DN Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 30 0.0110 0.0145 8.4 14 Single.
SIS406DN Key Features
- TrenchFET® power MOSFET
- PWM optimized
- New low thermal resistance PowerPAK®
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance