SIS496EDNT Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.0048 0.0062 14 50 a Single.
SIS496EDNT Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Thin 0.75 mm height
- Typical ESD performance 2500 V
- Material categorization: for definitions of pliance