SIS780DN Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 30 0.0135 0.0175 7.3 18 Single plus integrated Schottky (SkyFET).
SIS780DN Key Features
- SkyFET® monolithic TrenchFET® Gen III power MOSFET and Schottky diode
- 100 % Rg and UIS tested
- Material categorization