SiS110DN Description
() at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 100 0.054 0.070 6.5 14.2 g Single.
SiS110DN Key Features
- TrenchFET® Gen IV power MOSFET
- Tuned for the lowest RDS
- Qoss FOM
- 100 % Rg and UIS tested
- Material categorization: