• Part: SISA04DN
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Vishay
  • Size: 498.48 KB
Download SISA04DN Datasheet PDF
Vishay
SISA04DN
FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Gen IV Power MOSFET - 100 % Rg and UIS Tested - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Switch Mode Power Supplies - Personal puters and Servers - Tele Bricks - VRM’s and POL S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Pulsed Drain Current (t = 300 µs) TA = 70 °C Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 m H IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)c, d TJ,...