SiSA01DN Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View -30 0.0049 0.0082 27 60 a, g Single.
SiSA01DN Key Features
- TrenchFET® Gen IV p-channel power MOSFET
- Provides exceptionally low RDS(ON) in a pact package that is thermally enhanced
- Enables higher power density
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance
SiSA01DN Applications
- Battery management in mobile devices