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SiSA01DN
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
PowerPAK® 1212-8 Single
D D8 D7 D6 5
3.3 mm
1 Top View
3.3 mm
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration
1 2S 3S 4S G Bottom View
-30 0.0049 0.0082
27 60 a, g Single
FEATURES • TrenchFET® Gen IV p-channel power MOSFET
• Provides exceptionally low RDS(ON) in a compact package that is thermally enhanced
• Enables higher power density
• 100 % Rg and UIS tested • Material categorization: for definitions of compliance
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