SiSA01DN
FEATURES
- Trench FET® Gen IV p-channel power MOSFET
- Provides exceptionally low RDS(ON) in a pact package that is thermally enhanced
- Enables higher power density
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Battery management in mobile devices
- Adapter and charger switch
- Battery switch
- Load switch
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK 1212-8 Si SA01DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
TC = 25 °C TA = 25 °C
Single pulse avalanche current Single pulse avalanche energy
L = 0.1 m H
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage...
