SM6S10AT Overview
Not For New Designs - Alternative Device: SM6S10AHM3 thru SM6S43AHM3 .vishay. SM6S10AT thru SM6S43AT Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions DO-218 patible Anode Cathode PRIMARY CHARACTERISTICS VWM VBR PPPM (10 x 1000 μs) PPPM (10 x 10 000 μs) PD IFSM TJ max.
SM6S10AT Key Features
- Junction passivation optimized design passivated
- TJ = 175 °C capability suitable for high reliability
- Available in unidirectional polarity only
- Low leakage current
- Low forward voltage drop
- High surge capability
- Meets ISO7637-2 surge specification (varied by test
- Meets MSL level 1, per J-STD-020, LF maximum peak
- AEC-Q101 qualified
- Automotive ordering code: base P/NHE3
SM6S10AT Applications
- RoHS-pliant, AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Pola
