Datasheet4U Logo Datasheet4U.com

SQ2361AEES - Automotive P-Channel MOSFET

Features

  • TrenchFET® power MOSFET.
  • Typical ESD protection: 800 V.
  • AEC-Q101 qualified.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912          .

📥 Download Datasheet

Datasheet preview – SQ2361AEES

Datasheet Details

Part number SQ2361AEES
Manufacturer Vishay
File Size 263.28 KB
Description Automotive P-Channel MOSFET
Datasheet download datasheet SQ2361AEES Datasheet
Additional preview pages of the SQ2361AEES datasheet.

📁 Similar Datasheet

  • SQ2308BES - Automotive N-Channel MOSFET (FreesCale Electronics)
  • SQ2318AES - N-Channel MOSFET (INCHANGE)
  • SQ201 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • SQ202 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • SQ2222A - Chip Type 2C2222A Geometry 0400 Polarity NPN (Semicoa Semiconductor)
  • SQ2222AF - Chip Type 2C2222A Geometry 0400 Polarity NPN (Semicoa Semiconductor)
  • SQ24D25 - DC Solid-State Relay (Teledyne)
  • SQ24R25 - DC Solid-State Relay (Teledyne)
  • SQ24R25-02 - DC Solid-State Relay (Teledyne)
  • SQ2857 - Chip Type 2C2857 Geometry 0011 Polarity NPN (Semicoa Semiconductor)
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
www.vishay.com SQ2361AEES Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration SOT-23 (TO-236) D 3 1 G Top View Marking Code: 9Cxxx 2 S -60 0.170 0.230 -2.9 Single S G P-Channel MOSFET D FEATURES • TrenchFET® power MOSFET • Typical ESD protection: 800 V • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
Published: |