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SQD10N30-330H - Automotive N-Channel MOSFET

General Description

S15-1136-Rev.

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

Key Features

  • TrenchFET® power MOSFET.
  • Package with low thermal resistance.
  • AEC-Q101 qualified d.
  • 100 % Rg tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Drain connected to tab G S D G Top View.

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Full PDF Text Transcription (Reference)

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www.vishay.com SQD10N30-330H Vishay Siliconix Automotive N-Channel 300 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration TO-252 300 0.330 10 Single D FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.