SQD50N10-8m9L Datasheet | Vishay

FEATURES - Trench FET® Power MOSFET - Package with Low Thermal Resistance - AEC-Q101 Qualified - 100 % Rg and UIS Tested - Material categorization: For definitions of pliance please see .vishay./doc?99912 Drain Connected to Tab GDS Top View ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free G N-Channel MOSFET S TO-252 SQD50N10-8m9L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25 °Ca TC = 125 °C VGS ID Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 m H IAS EAS Maximum Power Dissipationb TC = 25...