SQJ200EP
SQJ200EP is Automotive Dual N-Channel MOSFETs manufactured by Vishay.
FEATURES
- Trench FET® power MOSFET
- AEC-Q101 qualified d
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
D1 D2
6.15 mm
1 Top View
5.13 mm
D1
D2
1 2 S1 3 G1 4 S2 G2 Bottom View
G1 G2
S1 N-Channel 1 MOSFET
S2 N-Channel 2 MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL N-CHANNEL 1 N-CHANNEL 2
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current a
Continuous Source Current (Diode Conduction) Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) e, f
TC = 25 °C TC = 125 °C
L = 0.1 m H TC = 25 °C TC = 125 °C
VDS VGS
IS IDM IAS EAS
TJ, Tstg
20 20 20a 80 22 24.2 27 9
± 20
-55 to +175 260
60 50 44 180 40 80 48 16
UNIT V
A m J W °C
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case...
