SQJB00EP Datasheet | Vishay

FEATURES - Trench FET® power MOSFET - AEC-Q101 qualified - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 D1 D2 PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) per leg Configuration Package 60 0.0130 30 Dual Power PAK SO-8L G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode conduction) a Pulsed Drain Current b TC = 25 °C a TC = 125 °C IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 m H IAS EAS Maximum Power Dissipation b TC = 25 °C TC = 125 °C Operating Junction and Storage...