SQJB42EP Datasheet | Vishay

FEATURES - Trench FET® power MOSFET - AEC-Q101 qualified - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 D1 D2 PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) per leg Configuration Package 40 0.0095 30 Dual Power PAK SO-8L G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current a Continuous source current (diode conduction) a Pulsed drain current b TC = 25 °C TC = 125 °C IS IDM Single pulse avalanche current Single pulse avalanche energy L = 0.1 m H IAS EAS Maximum power dissipation b TC = 25 °C TC = 125 °C Operating junction and storage...