SQJQ181EL Datasheet | Vishay

FEATURES - Trench FET® power MOSFET - AEC-Q101 qualified - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 8 mm PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) g Configuration -80 0.0055 0.0077 -175 Single D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Power PAK 8 x 8L SQJQ181EL ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage a Continuous drain current g TC = 25 °C b TC = 125 °C Continuous source current (diode conduction) b, g Pulsed drain current c, g Single pulse avalanche current Single pulse avalanche energy L = 0.1 m H Maximum power dissipation c, g TC = 25 °C TC = 125 °C Operating junction and storage temperature range Soldering remendations (peak temperature) d, e TJ, Tstg LIMIT -80 ± 20 -175 -101 -317 -619 -78 305 348...