SQJQ900E
SQJQ900E is Automotive Dual N-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® power MOSFET
- AEC-Q101 qualified
- 100 % Rg and UIS tested
- Fully lead (Pb)-free device
- Material categorization: for definitions of pliance please see .vishay./doc?99912
D1 D2
8 mm
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration Package
40 0.0039 0.0047
100 Dual Power PAK 8 x 8L
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range Soldering...
