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SQM200N04-1m8 - Automotive N-Channel MOSFET

General Description

S15-1874-Rev.

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

Key Features

  • TrenchFET® power MOSFET.
  • Package with low thermal resistance.
  • 100 % Rg and UIS tested.
  • AEC-Q101 qualified d.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 D Top View D G S G N-Channel MOSFET S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SQM200N04-1m8 Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package 40 0.0018 200 Single TO-263-7L TO-263 7-Lead FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified d • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Top View D G S G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a TC = 25 °C a TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.