SQS411ENW Datasheet | Vishay

FEATURES - Trench FET® power MOSFET - AEC-Q101 qualified - 100 % Rg and UIS tested - Material categorization:  for definitions of pliance please see .vishay./doc?99912 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current a Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering remendations (peak temperature) d, e TC = 25 °C TC = 125 °C L = 0.1 m H TC = 25 °C TC = 125 °C VDS VGS IS IDM IAS EAS TJ, Tstg LIMIT -40 ± 20 -16 -16 -16 -64 -19 18 39.5 13.2 -55 to +175 260 UNIT V A m J W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient Junction-to-case (drain) PCB mount c Rth JA °C/W Rth JC Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (.vishay./doc?73257). The Power PAK 1212-8W is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not remended for leadless...