SQS966ENW Datasheet | Vishay

FEATURES - Trench FET® power MOSFET - AEC-Q101 qualified - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 D1 D2 PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package 60 0.036 0.048 6 Dual Power PAK 1212-8W G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current a Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b Operating junction and storage temperature range Soldering remendations (peak temperature) e, f TC = 25 °C TC = 125 °C L = 0.1 m H TC = 25 °C TC = 125 °C VDS VGS IS IDM IAS EAS TJ, Tstg LIMIT 60 ± 20 6 6 6 24 12 7.2 27.8 9.25 -55 to +175 260 UNIT V A m J W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL Rth JA Rth JC LIMIT 94 5.4 UNIT...