SQSA82CENW Datasheet | Vishay

FEATURES - Trench FET® power MOSFET - AEC-Q101 qualified - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration 80 0.0460 0.0700 12 Single S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Power PAK 1212-8W SQSA82CENW ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering remendations (peak temperature) d, e TC = 25 °C a TC = 125 °C L = 0.1 m H TC = 25 °C TC = 125 °C VDS VGS IS IDM IAS EAS TJ, Tstg LIMIT 80 ± 20 12 9.68 12 35 13 8.45 27 9 -55 to +175 260 UNIT V A m J W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient Junction-to-case...