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SUD50P08-26
Vishay Siliconix
P-Channel 80-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) - 80
rDS(on) (Ω) 0.026 at VGS = - 10 V
ID (A)a - 50
Qg (Typ) 102 nC
FEATURES • TrenchFET® Power MOSFET
RoHS
COMPLIANT
TO-252
S
G
GDS Top View
Drain Connected to Tab
Ordering Information: SUD50P08-26-E3 (Lead (Pb)-free)
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Avalanche Current Single-Pulse Avalanche Energy
L = 0.
SUD50P08-26 Datasheet
