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SUP17N25-165 - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature TO-220AB D GD S Top View Ordering Information: SUP17N25-165-E3 G S N-Channel MOSFET.

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Datasheet Details

Part number SUP17N25-165
Manufacturer Vishay
File Size 67.23 KB
Description N-Channel MOSFET
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SUP17N25-165 Vishay Siliconix N-Channel 250-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 250 0.165 at VGS = 10 V ID (A) 17 FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature TO-220AB D GD S Top View Ordering Information: SUP17N25-165-E3 G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Single Pulse Avalanche Current IAS Single Pulse Avalanche Energy L = 0.
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