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SUP/SUB75N08-10
Vishay Siliconix
N-Channel 75-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
75
rDS(on) (W)
0.010
ID (A)
75a
TO-220AB
TO-263
DRAIN connected to TAB
GD S Top View SUP75N08-10
G DS Top View SUB75N08-10
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
TC = 25_C TC = 125_C
VGS ID
"20 75a 55
Pulsed Drain Current
IDM 240
Avalanche Current Repetitive Avalanche Energyb
Power Dissipation
L = 0.1 mH TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
IAR EAR
PD
60 280 187c 3.