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Si1062X - N-Channel MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • Gate-source ESD protected: 1000 V.
  • Material categorization:  for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number Si1062X
Manufacturer Vishay
File Size 201.19 KB
Description N-Channel MOSFET
Datasheet download datasheet Si1062X Datasheet

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www.vishay.com Si1062X Vishay Siliconix N-Channel 20 V (D-S) MOSFET SC-89 (3 leads) D 3 Marking code: J 1 G Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.8 V RDS(on) max. () at VGS = 1.5 V Qg typ. (nC) ID (A) Configuration 2 S 20 0.420 0.492 0.597 0.762 1 0.53 Single FEATURES • TrenchFET® power MOSFET • Gate-source ESD protected: 1000 V • Material categorization:  for definitions of compliance please see www.vishay.