Si1062X
FEATURES
- Trench FET® power MOSFET
- Gate-source ESD protected: 1000 V
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Load / power switching for portable
D devices
- Drivers: relays, solenoids, lamps, hammers, displays, memories
- Battery operated systems
- Power supply converter circuits
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
SC-89 Si1062X-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) a
TA = 25 °C TA = 70 °C
Pulsed drain current (t = 300 μs)
Continuous source-drain diode current
TA = 25 °C
Maximum power dissipation a
TA = 25 °C TA = 70 °C
Operating junction and storage temperature range
TJ, Tstg
LIMIT 20 ±8
0.53 a, b 0.43 a, b
2 0.18 a, b 0.22 a, b 0.14 a, b -55 to +150
UNIT...
