Si2387DS Datasheet | Vishay

FEATURES - Trench FET® Gen IV p-channel power MOSFET - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Load switch - Circuit protection - Motor drive control PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (n C) ID (A) a, e Configuration -80 0.164 0.242 6.7 -3.0 Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SOT-23 SI2387DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) Continuous source-drain diode current Maximum power dissipation Operating junction and storage temperature range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg D P-Channel MOSFET LIMIT -80 ± 20 -3.0 e -2.4 -2.1 b, c -1.7 b, c -10 -2.1 -1.1 b, c 2.5 1.6 1.3 b, c 0.8 b, c -55 to +150 UNIT V W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b Maximum junction-to-foot (drain) t5s Steady state Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 166 °C/W e. Package limited SYMBOL Rth JA Rth JF TYPICAL 75 40 MAXIMUM 100 50 UNIT °C/W S24-1163-Rev. C,...