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P-Channel 1.8-V (G-S) MOSFET
Si3433
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.042 @ VGS = - 4.5 V
- 20
0.057 @ VGS = - 2.5 V
0.080 @ VGS = - 1.8 V
3 mm
TSOP-6 Top View
1
6
2
5
3
4
2.85 mm
ID (A)
- 5.6 - 4.8 - 4.1
(4) S
(3) G
(1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage Gate-Source Voltage
VDS
- 20
VGS
"8
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 85_C
TA = 25_C TA = 85_C
ID IDM IS PD TJ, Tstg
- 5.6
- 4.3
- 4.1
- 3.1
- 20
- 1.7
- 0.9
2.0
1.1
1.0
0.
Si3433 Datasheet
