Si3433BDV Overview
P-Channel 1.8-V (G-S) MOSFET Si3433BDV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.042 at VGS = - 4.5 V - 20 0.057 at VGS = - 2.5 V 0.080 at VGS = - 1.8 V ID (A) - 5.6 - 4.8.
Si3433BDV Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFETs: 1.8 V Rated
- pliant to RoHS Directive 2002/95/EC