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New Product
P-Channel 30 V (D-S) MOSFET
Si4101DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
- 30 0.0060 at VGS = - 10 V 0.0080 at VGS = - 4.5 V
SO-8
ID (A)d - 25.7 - 22.3
Qg (Typ.) 65 nC
S1 S2 S3 G4
8D 7D 6D 5D
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested • Material categorization:
For definitions of compliance please see www.vishay.