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N-Channel 60-V (D-S) MOSFET
Si4450DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60
0.024 at VGS = 10 V
0.03 at VGS = 6.0 V
ID (A) 7.5 6.5
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4450DY-T1-E3 (Lead (Pb)-free) Si4450DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
60
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
7.5 5.5
A
Pulsed Drain Current
IDM
50
Continuous Source Current (Diode Conduction)a
IS
2.1
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
2.
Si4450DY Datasheet
