Si4450DY Datasheet PDF

Part Number	Si4450DY
Manufacturer	Vishay
Overview	N-Channel 60-V (D-S) MOSFET Si4450DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 0.024 at VGS = 10 V 0.03 at VGS = 6.0 V ID (A) 7.5 6.5 FEATURES • Halogen-free According to IEC 61. * Halogen-free According to IEC 61249-2-21 Available * TrenchFET® Power MOSFET S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4450DY-T1-E3 (Lead (Pb)-free) Si4450DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherw.

Part Number	SI4450DY
Description	N-Channel Enhancement-Mode MOSFET
Manufacturer	TEMIC Semiconductors
Overview	Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 60 rDS(on) (W) 0.024 @ VGS = 10 V 0.03 @ VGS = 6.0 V ID (A) "7.5 "6.5 D SO-8 S S S G 1 2 3 4 Top View S N-Channel MOSFET 8 7 6 5 . 450DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductance b Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS =.

Part Number

SI4450DY

Description

N-Channel Enhancement-Mode MOSFET

Manufacturer

TEMIC Semiconductors

Overview

Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 60 rDS(on) (W) 0.024 @ VGS = 10 V 0.03 @ VGS = 6.0 V ID (A) "7.5 "6.5 D SO-8 S S S G 1 2 3 4 Top View S N-Channel MOSFET 8 7 6 5 . 450DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductance b Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS =.