The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
New Product
Si4730EY
Vishay Siliconix
Current Sensing MOSFET, N-Channel 30-V (D-S)
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.015 @ VGS = 10 V 0.020 @ VGS = 4.5 V
ID (A)
11.7 10.1
SENSE KELVIN
S G
1 2 3 4
SO-8 Top View
8D 7D 6D 5D
D
G SENSE
KELVIN N-Channel MOSFET S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS ID
IDM IS PD
TJ, Tstg
30 "20 11.7 9.8
40 3.3 3.6 2.5
–55 to 175
8.0 6.7
1.6 1.7 1.