Si7111EDN Description
() at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View -30 0.00855 0.01600 30.5 60 a, g Single.
Si7111EDN Key Features
- TrenchFET® Gen III p-channel power MOSFET
- RDS(on) rating at VGS = -2.5 V
- 100 % Rg and UIS tested
- Typical ESD protection: 4600 V HBM
- Material categorization: for definitions of pliance please see .vishay./doc?99912