Si7111EDN - P-Channel 30 V (D-S) MOSFET

Vishay

Key Features

TrenchFET® Gen III p-channel power MOSFET.
RDS(on) rating at VGS = -2.5 V.
100 % Rg and UIS tested.
Typical ESD protection: 4600 V HBM.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Si7111EDN p-channel 30 v (d-s) mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	Si7111EDN
Manufacturer	Vishay
File Size	143.87 KB
Description	P-Channel 30 V (D-S) MOSFET
Datasheet	Si7111EDN Datasheet

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www.vishay.com Si7111EDN Vishay Siliconix P-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8 Single D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View -30 0.00855 0.01600 30.5 60 a, g Single FEATURES • TrenchFET® Gen III p-channel power MOSFET • RDS(on) rating at VGS = -2.5 V • 100 % Rg and UIS tested • Typical ESD protection: 4600 V HBM • Material categorization: for definitions of compliance please see www.vishay.