Si8466EDB - N-Channel MOSFET

Vishay

Key Features

TrenchFET® power MOSFET.
Typical ESD protection 3000 V HBM.
Ultra small 1 mm x 1 mm maximum outline.
Ultra thin 0.548 mm maximum height.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Si8466EDB n-channel mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	Si8466EDB
Manufacturer	Vishay
File Size	153.43 KB
Description	N-Channel MOSFET
Datasheet	Si8466EDB Datasheet

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Full PDF Text Transcription (Reference)

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www.vishay.com Si8466EDB Vishay Siliconix N-Channel 8 V (D-S) MOSFET MICRO FOOT® 1 x 1 S S2 xxxxxxx 3 1 1 1 mm 4G D 1 mm Backside View Bump Side View Marking code: xxxx = 8466 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.5 V RDS(on) max. () at VGS = 1.2 V Qg typ. (nC) ID (A) a, e Configuration 8 0.043 0.046 0.060 0.090 6.8 5.4 Single FEATURES • TrenchFET® power MOSFET • Typical ESD protection 3000 V HBM • Ultra small 1 mm x 1 mm maximum outline • Ultra thin 0.548 mm maximum height • Material categorization: for definitions of compliance please see www.vishay.