SiA4265EDJ Description
(Ω) at VGS = -4.5 V RDS(on) max. (Ω) at VGS = -2.5 V RDS(on) max. (Ω) at VGS = -1.8 V Qg typ.
SiA4265EDJ Key Features
- TrenchFET® power MOSFET
- 100 % Rg tested
- Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Low on-resistance
- Typical ESD protection: 3000 V (HBM)
- Material categorization: for definitions of pliance please see .vishay./doc?99912
SiA4265EDJ Applications
- Power management for portable and consumer