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SiA4265EDJ - P-Channel MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • 100 % Rg tested.
  • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance.
  • Typical ESD protection: 3000 V (HBM).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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www.vishay.com SiA4265EDJ Vishay Siliconix P-Channel 20 V (D-S) MOSFET PowerPAK® SC-70-6L Single D D6 S5 4 2.05 mm 1 2.05 mm Top View S 7 1 2D 3D G Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = -4.5 V RDS(on) max. (Ω) at VGS = -2.5 V RDS(on) max. (Ω) at VGS = -1.8 V Qg typ. (nC) ID (A) a, e Configuration Marking Code: KC -20 0.0320 0.0410 0.0675 13.8 -9 Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free FEATURES • TrenchFET® power MOSFET • 100 % Rg tested • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 3000 V (HBM) • Material categorization: for definitions of compliance please see www.vishay.