SiA4265EDJ Datasheet PDF - Vishay P-Channel MOSFET Specs

SiA4265EDJ - P-Channel MOSFET

Datasheet Summary

Features

TrenchFET® power MOSFET.
100 % Rg tested.
Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance.
Typical ESD protection: 3000 V (HBM).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Datasheet Details

Part number	SiA4265EDJ
Manufacturer	Vishay
File Size	163.84 KB
Description	P-Channel MOSFET
Datasheet	SiA4265EDJ Datasheet
Additional preview pages of the SiA4265EDJ datasheet.

📁 Similar Datasheet

SIA429DJT - P-Channel 20V (D-S) MOSFET (Vishay Siliconix)

SIA414DJ - Dual N-Channel 8-V (D-S) MOSFET (Vishay Siliconix)

SIA433EDJ-T1-GE3 - P-Channel 20V MOSFET (VBsemi)

SIA444DJT - N-Channel 30 V (D-S) MOSFET (Vishay Siliconix)

SiA447DJ - P-Channel (Vishay Siliconix)

SiA519 - N-&P-Channel MOSFET (Tuofeng Semiconductor)

SIA811DJ - P-Channel 20-V (D-S) MOSFET (Vishay Siliconix)

SIA911DJ - Dual P-Channel MOSFET (Vaishali Semiconductor)

SIA921EDJ - Dual P-Channel 20-V (D-S) MOSFET (Vishay Siliconix)

SIA923EDJ - Dual P-Channel 20-V (D-S) MOSFET (Vishay Siliconix)

Full PDF Text Transcription

Click to expand full text

www.vishay.com SiA4265EDJ Vishay Siliconix P-Channel 20 V (D-S) MOSFET PowerPAK® SC-70-6L Single D D6 S5 4 2.05 mm 1 2.05 mm Top View S 7 1 2D 3D G Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = -4.5 V RDS(on) max. (Ω) at VGS = -2.5 V RDS(on) max. (Ω) at VGS = -1.8 V Qg typ. (nC) ID (A) a, e Configuration Marking Code: KC -20 0.0320 0.0410 0.0675 13.8 -9 Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free FEATURES • TrenchFET® power MOSFET • 100 % Rg tested • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 3000 V (HBM) • Material categorization: for definitions of compliance please see www.vishay.

Published: Oct 26, 2024 |