SiHB12N60E
SiHB12N60E is Power MOSFET manufactured by Vishay.
.vishay.
Si HB12N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (n C) Qgs (n C) Qgd (n C) Configuration
650 VGS = 10 V
58 6 13 Single
D2PAK (TO-263)
GD S
S N-Channel MOSFET
Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Server and tele power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery...
