SiHB12N65E Description
SiHB12N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 70 9 16 Single 0.38 D2PAK (TO-263) D GD S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free.
SiHB12N65E Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance