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SiHD1K4N60E - Power MOSFET

Key Features

  • 4th generation E series technology.
  • Low figure-of-merit (FOM) Ron x Qg.
  • Low effective capacitance (Co(er)).
  • Reduced switching and conduction losses.
  • Avalanche energy rated (UIS).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

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www.vishay.com SiHD1K4N60E Vishay Siliconix E Series Power MOSFET DPAK (TO-252) D S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 7.5 1 3 Single 1.3 FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.