SiHF18N50C Description
SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 VGS = 10 V 76 21 29 Single TO-220 TO-220 FULLPAK 0.225.
SiHF18N50C Key Features
- Low Figure-of-Merit Ron x Qg
- 100 % Avalanche Tested
- High Peak Current Capability
- dV/dt Ruggedness
- Improved trr/Qrr
- Improved Gate Charge
- High Power Dissipations Capability
- pliant to RoHS Directive 2002/95/EC