SiHF23N60E Description
SiHF23N60E Vishay Siliconix E Series Power MOSFET D TO-220 FULLPAK G GDS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 95 16 25 Single 0.158.
SiHF23N60E Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance please see .vishay./doc?99912