SiHFU9010 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - Repetitive avalanche ratings - Surface-mount (IRFR9010, Si HFR9010) - Straight lead (IRFU9010, Si HFU9010) - Simple drive requirements - Ease of paralleling Available - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance bined with high transconductance; superior reverse energy and diode recovery d V/dt capability. The power MOSFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The DPAK (TO-252) surface-mount package brings the advantages of power MOSFETs to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9010, Si HFR9010 is provided on 16 mm tape. The straight lead option IRFU9010, Si HFU9010 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat dissipation is required such as, puters and peripherals, telemunication equipment, DC/DC converters, and a wide range of consumer products. ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free Si HFR9010-GE3 Lead (Pb)-free IRFR9010Pb F Note a. See device orientation DPAK (TO-252) Si HFR9010TR-GE3 a IRFR9010TRPb F a DPAK (TO-252) Si HFR9010TRL-GE3 a IRFR9010TRLPb F a IPAK (TO-251) Si HFU9010-GE3 IRFU9010Pb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor Single pulse avalanche energy b Drain-source voltage Maximum power...