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SiHFZ24S - Power MOSFET

General Description

Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced process technology.
  • Surface mount (IRFZ24S, SiHFZ24S).
  • 175 °C operating temperature.
  • Fast switching Available.
  • Material categorization:  for definitions of compliance please see www. vishay. com/doc?99912 Available Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.  Please see the informa.

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Full PDF Text Transcription for SiHFZ24S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFZ24S. For precise diagrams, and layout, please refer to the original PDF.

www.vishay.com IRFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.8 11 Si...

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g max. (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.8 11 Single 0.10 D D2PAK (TO-263) G GD S S N-Channel MOSFET FEATURES • Advanced process technology • Surface mount (IRFZ24S, SiHFZ24S) • 175 °C operating temperature • Fast switching Available • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 Available Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.