Download the SiHFZ46-E3 datasheet PDF.
This datasheet also covers the SiHFZ46 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Key Features
Dynamic dV/dt Rating
50 0.024.
175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available
Available
RoHS.
Full PDF Text Transcription for SiHFZ46-E3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SiHFZ46-E3. For precise diagrams, and layout, please refer to the original PDF.
IRFZ46, SiHFZ46 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 66 21 25 Single D FEATURES • D...
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(nC) Qgd (nC) Configuration VGS = 10 V 66 21 25 Single D FEATURES • Dynamic dV/dt Rating 50 0.024 • • • • • 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
SiHFZ46-E3 Datasheet
