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SiHG28N65EF - E Series Power MOSFET

Features

  • Fast body diode MOSFET using E series technology.
  • Reduced trr, Qrr, and IRRM.
  • Low figure-of-merit (FOM): Ron x Qg.
  • Low input capacitance (Ciss).
  • Low switching losses due to reduced Qrr.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiHG28N65EF
Manufacturer Vishay
File Size 142.24 KB
Description E Series Power MOSFET
Datasheet download datasheet SiHG28N65EF Datasheet
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www.vishay.com SiHG28N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 146 21 43 Single TO-247AC 0.102 D S D G G S N-Channel MOSFET FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.
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