SiHG28N65EF Description
SiHG28N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 146 21 43 Single TO-247AC 0.102 D S D G G S N-Channel MOSFET.
SiHG28N65EF Key Features
- Fast body diode MOSFET using E series
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM): Ron x Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance