Full PDF Text Transcription for SiHG28N60EF (Reference)
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www.vishay.com SiHG28N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg (Max.) (nC) Qgs (n...
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ARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 120 17 33 Single TO-247AC 0.123 D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.
SiHG28N60EF Datasheet
