Datasheet Summary
.vishay.
Vishay Siliconix
EF Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
120 17 33 Single
TO-247AC
0.123 D
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Features
- Fast body diode MOSFET using E series technology
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM): Ron x Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance please see .vishay./doc?99912...