Datasheet4U Logo Datasheet4U.com

SiHG28N60EF - EF Series Power MOSFET

Datasheet Summary

Features

  • Fast body diode MOSFET using E series technology.
  • Reduced trr, Qrr, and IRRM.
  • Low figure-of-merit (FOM): Ron x Qg.
  • Low input capacitance (Ciss).
  • Low switching losses due to reduced Qrr.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet preview – SiHG28N60EF

Datasheet Details

Part number SiHG28N60EF
Manufacturer Vishay
File Size 179.71 KB
Description EF Series Power MOSFET
Datasheet download datasheet SiHG28N60EF Datasheet
Additional preview pages of the SiHG28N60EF datasheet.

📁 Similar Datasheet

Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
www.vishay.com SiHG28N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 120 17 33 Single TO-247AC 0.123 D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.
Published: |