SiHG28N60EF Overview
SiHG28N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. at 25 °C (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 120 17 33 Single TO-247AC 0.123 D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free.
SiHG28N60EF Key Features
- Fast body diode MOSFET using E series
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM): Ron x Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance